onsemi PowerTrench Type N-Channel Power MOSFET, 79 A, 150 V Enhancement, 3-Pin TO-220AB FDP2532
- RS 제품 번호:
- 671-4803
- 제조사 부품 번호:
- FDP2532
- 제조업체:
- onsemi
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Subtotal (1 unit)*
₩5,922.00
재고있음
- 1 개 단위 배송 준비 완료
- 추가로 2026년 4월 08일 부터 800 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 12 | ₩5,922.00 |
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| 25 + | ₩5,677.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-4803
- 제조사 부품 번호:
- FDP2532
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.016Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.016Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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