onsemi BS170 Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92 BS170
- RS 제품 번호:
- 671-4736
- 제조사 부품 번호:
- BS170
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩3,346.40
재고있음
- 4,630 개 단위 배송 준비 완료
- 추가로 2026년 1월 02일 부터 400 개 단위 배송
- 추가로 2026년 3월 11일 부터 10,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 240 | ₩334.64 | ₩3,346.40 |
| 250 - 1240 | ₩329.00 | ₩3,290.00 |
| 1250 + | ₩270.72 | ₩2,707.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-4736
- 제조사 부품 번호:
- BS170
- 제조업체:
- onsemi
사양
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | BS170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 830mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.6V | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Width | 4.19 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-724 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series BS170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 830mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.6V | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.2mm | ||
Height 5.33mm | ||
Width 4.19 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-724 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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