onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF
- RS 제품 번호:
- 671-1062
- 제조사 부품 번호:
- FQT7N10LTF
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩6,110.00
마지막 RS 재고
- 10 개 단위 배송 준비 완료
- 2026년 1월 27일 부터 최종 3,630 개 단위 배송
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 995 | ₩1,222.00 | ₩6,110.00 |
| 1000 - 1995 | ₩1,188.16 | ₩5,940.80 |
| 2000 + | ₩1,173.12 | ₩5,865.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-1062
- 제조사 부품 번호:
- FQT7N10LTF
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Width | 3.56 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Width 3.56 mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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