onsemi QFET Type N-Channel MOSFET, 15.6 A, 100 V Enhancement, 3-Pin TO-252 FQD19N10LTM
- RS 제품 번호:
- 671-0970
- 제조사 부품 번호:
- FQD19N10LTM
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩8,760.80
공급 부족
- 2,395 개 단위 배송 준비 완료
당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩1,752.16 | ₩8,760.80 |
| 625 - 1245 | ₩1,707.04 | ₩8,535.20 |
| 1250 + | ₩1,680.72 | ₩8,403.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-0970
- 제조사 부품 번호:
- FQD19N10LTM
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi QFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252 FQD12N20LTM
- onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 FQD13N10LTM
- onsemi QFET Type N-Channel MOSFET, 15.6 A, 100 V Enhancement, 3-Pin TO-252
- onsemi QFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252
- onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 FQD13N10TM
- onsemi QFET Type N-Channel MOSFET, 2.8 A, 600 V Enhancement, 3-Pin TO-252 FQD5N60CTM
- onsemi QFET Type N-Channel MOSFET, 1.6 A, 1 kV Enhancement, 3-Pin TO-252 FQD2N100TM
- onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252