onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- RS 제품 번호:
- 671-0908
- 제조사 부품 번호:
- FQB4N80TM
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩2,519.20
마지막 RS 재고
- 최종적인 1,041 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩2,519.20 |
| 10 - 19 | ₩2,462.80 |
| 20 - 49 | ₩2,387.60 |
| 50 - 249 | ₩2,331.20 |
| 250 + | ₩2,274.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-0908
- 제조사 부품 번호:
- FQB4N80TM
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | QFET | |
| Package Type | TO-263 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.13W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Number of Elements per Chip | 1 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series QFET | ||
Package Type TO-263 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.13W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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