onsemi QFET N-Channel MOSFET, 31 A, 200 V Enhancement, 3-Pin TO-263 FQB34N20LTM

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RS 제품 번호:
671-0898
제조사 부품 번호:
FQB34N20LTM
제조업체:
onsemi
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브랜드

onsemi

Series

QFET

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

31 A

Maximum Drain Source Voltage (Vds)

200 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-263

Automotive Standard

No

Forward Voltage (Vf)

1.5 V

Height

4.83 mm

Length

10.67 mm

Maximum Drain Source Resistance (Rds)

75 mΩ

Maximum Gate Source Voltage (Vgs)

-20 V, +20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

3.13 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

55 nC

Width

9.65 mm

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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