Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK

RS 제품 번호:: 541-1607
제조사 부품 번호:: IRFU024NPBF
제조업체:: Infineon

Subtotal (1 unit)*

₩1,955.20

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2026년 1월 02일 부터 30 개 단위 배송

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RS 제품 번호:: 541-1607
제조사 부품 번호:: IRFU024NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	55V
	Package Type	IPAK
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	45W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.73mm
	Height	6.22mm
	Width	2.39 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 55V
	Package Type IPAK
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 45W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.73mm
	Height 6.22mm
	Width 2.39 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits

• Maximum power dissipation of up to 45W for robust operation

• Low drain-source resistance of 75mΩ enhances energy efficiency

• Maximum gate threshold of 4V for improved performance

• Single transistor configuration simplifies design integration

• Designed for through-hole mounting in a TO-251 package for easy installation

Applications

• Used in power management systems for enhanced efficiency

• Ideal for high-frequency switching

• Suitable for automotive electronics ensuring consistent performance

• Employed in industrial automation for control systems

• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.