Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin IPAK IRFU120NPBF

RS 제품 번호:: 178-1507
제조사 부품 번호:: IRFU120NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin IPAK IRFU120NPBF

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Subtotal (1 tube of 75 units)*

₩43,005.00

재고있음

4,200 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
75 - 75	₩573.40	₩42,991.84
150 - 225	₩560.24	₩42,059.36
300 +	₩548.96	₩41,130.64

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-1507
제조사 부품 번호:: IRFU120NPBF
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	6.6mm
	Height	6.1mm
	Width	2.3 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 6.6mm
	Height 6.1mm
	Width 2.3 mm
	Standards/Approvals No
	Automotive Standard No

IRFU120NPBF Data Sheet

Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF

This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.

Features & Benefits

• Designed for enhancement mode operation, offering reliable switching

• High power dissipation capability of 48W enhances performance

• Ideal for high current applications in robust electronic designs

• Single Si MOSFET configuration ensures simplified integration

Applications

• Used in power management solutions for automation systems

• Used in motor control circuits for industrial machinery

• Utilised in power converters for renewable energy systems

• Suitable for consumer electronics requiring reliable power delivery

• Integral to motor drives in electrical and mechanical

What is the significance of the low Rds(on) value?

The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.

How does the MOSFET perform under extreme temperatures?

With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.

What benefits does the enhancement mode provide for circuit designers?

Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.

Can this MOSFET be used in high power applications?

Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.