Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF

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포장 옵션
RS 제품 번호:
540-9812
Distrelec 제품 번호:
302-84-009
제조사 부품 번호:
IRF3710PBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

130nC

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.54mm

Height

8.77mm

Width

4.69 mm

Distrelec Product Id

302-84-009

Automotive Standard

No

COO (Country of Origin):
PH

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF


This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.

Features & Benefits


• Utilises HEXFET technology for low on-resistance

• Handles a maximum continuous drain current of 57A

• Functions effectively within a drain-source voltage of 100V

• Enables fast switching capabilities to enhance overall performance

• Designed for operation at a maximum junction temperature of +175°C

• Optimised for thermal management with minimal heat generation

Applications


• Utilised in automotive power systems for efficient energy management

• Suitable for power supply circuits to enhance energy efficiency

• Applicable in motor control systems for high current scenarios

• Effective in industrial automation for consistent performance under load

What is the significance of the low on-resistance in this MOSFET?


Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.

Can it be used in high-temperature environments?


Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.

How does the gate threshold voltage affect operation?


The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.

What type of mounting is suitable for this device?


This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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