Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
- RS 제품 번호:
- 543-1099
- 제조사 부품 번호:
- IRF1405PBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩3,008.00
재고있음
- 추가로 2025년 12월 29일 부터 1,840 개 단위 배송
- 추가로 2026년 1월 05일 부터 244 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 12 | ₩3,008.00 |
| 13 - 24 | ₩2,951.60 |
| 25 + | ₩2,895.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 543-1099
- 제조사 부품 번호:
- IRF1405PBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.
Features & Benefits
• Maximum continuous drain current of 169A enhances durability
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation
Applications
• Used in industrial motor drives for efficient control
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems
What is the maximum gate-to-source voltage limit?
The maximum gate-to-source voltage is ±20V, ensuring safe operation.
How does this device handle thermal management?
It operates effectively up to 175°C, providing reliability in high-temperature conditions.
What factors should be considered during installation?
Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.
Can it be used in switching applications?
Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.
What gate charge values can be expected during operation?
The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220 IRF1405ZPBF
- Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247 IRFP1405PBF
- Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220 IRF4905PBF
- Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220 IRF5305PBF
- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF
- Infineon HEXFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 IRF2805PBF
- Infineon HEXFET Type N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220
