STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4

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Subtotal (1 tube of 30 units)*

₩398,860.80

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  • 300 개 단위 배송 준비 완료
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Per Tube*
30 - 30₩13,295.36₩398,877.72
60 - 60₩12,896.80₩386,904.00
90 +₩12,509.52₩375,302.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
287-7053
제조사 부품 번호:
STW65N045M9-4
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4

Series

STW65N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

8nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

312W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Higher dv/dt capability

Excellent switching performance

Easy to drive

100 percent avalanche tested

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