Vishay N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-247 IRFP460LCPBF
- RS 제품 번호:
- 281-6032
- Distrelec 제품 번호:
- 171-16-940
- 제조사 부품 번호:
- IRFP460LCPBF
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩14,780.00
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- 2026년 10월 05일 부터 2,488 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 49 | ₩14,780.00 |
| 50 - 99 | ₩14,340.00 |
| 100 - 249 | ₩13,920.00 |
| 250 + | ₩13,480.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 281-6032
- Distrelec 제품 번호:
- 171-16-940
- 제조사 부품 번호:
- IRFP460LCPBF
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 280W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 15.29mm | |
| Length | 14.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 280W | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 15.29mm | ||
Length 14.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFETs offer significantly lower gate charges than conventional MOSFETs. These improvements reduce gate drive requirements, speed up switching, and increase system savings, setting a new standard in power transistors for switching applications.
Ultra low gate charge
Reduced gate drive requirement
Isolated central mounting hole
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