Vishay SQ Type N-Channel MOSFET, 8 A, 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
- RS 제품 번호:
- 280-0009
- 제조사 부품 번호:
- SQ2348CES-T1_GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩716,280.00
일시적 품절
- 2026년 5월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩238.76 | ₩717,972.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 280-0009
- 제조사 부품 번호:
- SQ2348CES-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Forward Voltage Vf | 0.81V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Forward Voltage Vf 0.81V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
관련된 링크들
- Vishay SQ Type N-Channel MOSFET, 8 A, 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
- Vishay SQ Type P-Channel MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309CES-T1_GE3
- Vishay SQ2351CES Type P-Channel Single MOSFETs, -3.2 A, -20 V Enhancement, 3-Pin SOT-23 SQ2351CES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs, -2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361CES-T1_GE3
- Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3
- Vishay SQ2351CES Type P-Channel Single MOSFETs, -3.2 A, -20 V Enhancement, 3-Pin SOT-23
- Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23