Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

RS 제품 번호:: 653-158
제조사 부품 번호:: SQ2389CES-T1_GE3
제조업체:: Vishay

Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

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Subtotal (1 reel of 3000 units)*

₩1,134,900.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
3000 +	₩378.30	₩1,136,070.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 653-158
제조사 부품 번호:: SQ2389CES-T1_GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-4.1A
	Maximum Drain Source Voltage Vds	-40V
	Series	SQ2389CES
	Package Type	SOT-23
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.094Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	3W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	3.04mm
	Width	2.64mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -4.1A
	Maximum Drain Source Voltage Vds -40V
	Series SQ2389CES
	Package Type SOT-23
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.094Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 3W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 3.04mm
	Width 2.64mm
	Automotive Standard AEC-Q101

Datasheet - SQ2389CES-T1_GE3

Vishay SQ2389CES Series Single MOSFETs, -40V Maximum Drain Source Voltage, -4.1A Maximum Continuous Drain Current - SQ2389CES-T1_GE3

This single MOSFETs device is a P‑channel enhancement‑mode transistor designed for use on printed circuit boards in automotive and industrial control environments. It provides high‑temperature operation and low forward voltage for switching and protection roles within systems that require Compact SOT‑23 packaging and automotive‑grade robustness.

Features and Benefits:

• -40V rating enables handling of moderate negative rail voltages for switching
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments

Applications

• Suitable for high‑side switching in automotive electronic modules
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers

What package should I plan for on the PCB footprint?

The device comes in a three‑lead SOT‑23 package, requiring a small surface‑mount footprint compatible with standard SOT‑23 land patterns.

How does gate drive voltage influence use in systems?

The gate may be driven up to 20 V

ensure gate‑source excursions remain within that limit to avoid device stress.

What thermal considerations apply for sustained operation?

With a maximum junction temperature of 175 °C and 3W dissipation, thermal management such as copper pours or heatsinking is recommended for continuous high‑power use.

Can it meet automotive environmental demands?

It is qualified to AEC‑Q101 stress tests and is RoHS‑compliant, aligning with automotive component requirements.

What are the expected switching characteristics?

Typical gate charge of 12 nC indicates a modest charge requirement, supporting relatively low driving energy for switching transitions.