제조사부품번호

Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

RS 제품 번호:: 279-9950
제조사 부품 번호:: SIR5607DP-T1-RE3
제조업체:: Vishay

Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

₩6,508,560.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
3000 +	₩2,169.52	₩6,511,380.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9950
제조사 부품 번호:: SIR5607DP-T1-RE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90.9A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8
	Series	SiR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.007Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	112nC
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90.9A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8
	Series SiR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.007Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 112nC
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIR5607DP-T1-RE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

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