Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3
- RS 제품 번호:
- 273-7471
- 제조사 부품 번호:
- IPU80R1K4P7AKMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩7,350.80
재고있음
- 1,495 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩1,470.16 | ₩7,350.80 |
| 10 - 20 | ₩1,195.68 | ₩5,978.40 |
| 25 - 45 | ₩1,173.12 | ₩5,865.60 |
| 50 - 95 | ₩1,150.56 | ₩5,752.80 |
| 100 + | ₩947.52 | ₩4,737.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7471
- 제조사 부품 번호:
- IPU80R1K4P7AKMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | PG-TO251-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type PG-TO251-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET has better production yield by reducing ESD related failures. This MOSFET has less production issues and reduced field returns and easy to select right parts for fine tuning of designs. It enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Best in class performance
Easy to drive and to parallel
Integrated zener diode ESD protection
관련된 링크들
- Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3 IPU80R1K4P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251 IPU80R750P7AKMA1
- Infineon CoolMOS Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251
- Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251
