Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251
- RS 제품 번호:
- 220-7448
- 제조사 부품 번호:
- IPU80R750P7AKMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 75 units)*
₩136,629.00
재고있음
- 1,350 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 75 - 75 | ₩1,821.72 | ₩136,642.16 |
| 150 - 225 | ₩1,767.20 | ₩132,540.00 |
| 300 + | ₩1,714.56 | ₩128,550.64 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7448
- 제조사 부품 번호:
- IPU80R750P7AKMA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 51W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.41 mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 51W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.41 mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
관련된 링크들
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251 IPU80R750P7AKMA1
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