Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4
- RS 제품 번호:
- 273-5350
- 제조사 부품 번호:
- IPL65R230C7AUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩7,087.60
재고있음
- 80 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 48 | ₩3,543.80 | ₩7,087.60 |
| 50 - 98 | ₩3,468.60 | ₩6,937.20 |
| 100 - 248 | ₩3,402.80 | ₩6,805.60 |
| 250 - 998 | ₩3,327.60 | ₩6,655.20 |
| 1000 + | ₩3,261.80 | ₩6,523.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5350
- 제조사 부품 번호:
- IPL65R230C7AUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-VSON-4 | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.23Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 67W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC(J-STD20 andJESD22) | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-VSON-4 | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.23Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 67W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC(J-STD20 andJESD22) | ||
Automotive Standard No | ||
The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Halogen free
Better efficiency
Pb free lead plating
High power density
Better control of the gate
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