Infineon CoolMOS N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1
- RS 제품 번호:
- 222-4683
- 제조사 부품 번호:
- IPL60R185C7AUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩29,680.00
재고있음
- 2,995 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩5,936.00 | ₩29,680.00 |
| 10 - 95 | ₩5,832.00 | ₩29,160.00 |
| 100 - 245 | ₩5,728.00 | ₩28,640.00 |
| 250 - 495 | ₩5,624.00 | ₩28,120.00 |
| 500 + | ₩5,520.00 | ₩27,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4683
- 제조사 부품 번호:
- IPL60R185C7AUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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