STMicroelectronics STL Type N-Channel MOSFET, 120 A, 40 V Enhancement, 4-Pin ECOPACK STL260N4F7
- RS 제품 번호:
- 273-5099
- 제조사 부품 번호:
- STL260N4F7
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩7,929,840.00
일시적 품절
- 2026년 8월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩2,643.28 | ₩7,932,096.00 |
| 6000 - 6000 | ₩2,511.68 | ₩7,535,604.00 |
| 9000 + | ₩2,436.48 | ₩7,309,440.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5099
- 제조사 부품 번호:
- STL260N4F7
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ECOPACK | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ECOPACK | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
AEC-Q101 qualified
Excellent FoM
High avalanche ruggedness
관련된 링크들
- STMicroelectronics STL Type N-Channel MOSFET, 120 A, 40 V Enhancement, 4-Pin ECOPACK STL260N4F7
- STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STL260N4LF7
- STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT
- STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL320N4LF8
- STMicroelectronics N-Channel STL Type N-Channel MOSFET, 167 A, 40 V Enhancement, 8-Pin PowerFLAT STL170N4LF8
- STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL325N4LF8AG
- STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics N-Channel STL Type N-Channel MOSFET, 167 A, 40 V Enhancement, 8-Pin PowerFLAT