STMicroelectronics STL260N Type N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STL260N4LF7
- RS 제품 번호:
- 219-4230
- 제조사 부품 번호:
- STL260N4LF7
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩16,675.60
일시적 품절
- 2026년 7월 21일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,335.12 | ₩16,675.60 |
| 50 - 95 | ₩3,252.40 | ₩16,262.00 |
| 100 - 245 | ₩3,169.68 | ₩15,848.40 |
| 250 - 995 | ₩3,090.72 | ₩15,453.60 |
| 1000 + | ₩3,011.76 | ₩15,058.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 219-4230
- 제조사 부품 번호:
- STL260N4LF7
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL260N | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL260N | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
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