제조사부품번호

Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3

RS 제품 번호:: 273-2998
제조사 부품 번호:: IPB057N06NATMA1
제조업체:: Infineon

Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩13,084.80

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
5 - 45	₩2,616.96	₩13,084.80
50 - 95	₩2,432.72	₩12,163.60
100 - 245	₩2,131.92	₩10,659.60
250 - 495	₩2,068.00	₩10,340.00
500 +	₩1,819.84	₩9,099.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 273-2998
제조사 부품 번호:: IPB057N06NATMA1
제조업체:: Infineon

참조 문서

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제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	60V
	Series	IPB057N06N
	Package Type	PG-TO263-3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-5°C
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC 1, IEC61249-2-21
	Length	40mm
	Height	1.5mm
	Width	40 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 60V
	Series IPB057N06N
	Package Type PG-TO263-3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -5°C
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC 1, IEC61249-2-21
	Length 40mm
	Height 1.5mm
	Width 40 mm
	Automotive Standard No

Datasheet - IPB057N06NATMA1

The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3

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