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Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89

RS 제품 번호:: 264-8946
제조사 부품 번호:: VN3205N8-G
제조업체:: Microchip

Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89

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Subtotal (1 reel of 2000 units)*

₩3,673,520.00

일시적 품절

2026년 2월 25일 부터 배송

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수량	한팩당	릴당*
2000 +	₩1,836.76	₩3,672,016.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 264-8946
제조사 부품 번호:: VN3205N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	50V
	Package Type	SOT-89
	Series	VN3205
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	MOSFET
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 50V
	Package Type SOT-89
	Series VN3205
	Mount Type Through Hole
	Pin Count 3
	Channel Mode MOSFET
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - VN3205N8-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VN3205 Type N-Channel MOSFET, 1.5 A, 50 V MOSFET, 3-Pin SOT-89

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