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Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23 TN5335K1-G

RS 제품 번호:: 264-8925
제조사 부품 번호:: TN5335K1-G
제조업체:: Microchip

Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23 TN5335K1-G

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Subtotal (1 pack of 10 units)*

₩14,626.40

재고있음

추가로 2025년 12월 29일 부터 2,690 개 단위 배송

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수량	한팩당	한팩당*
10 - 40	₩1,462.64	₩14,628.28
50 - 90	₩1,434.44	₩14,342.52
100 - 240	₩1,169.36	₩11,691.72
250 - 990	₩1,144.92	₩11,456.72
1000 +	₩1,122.36	₩11,221.72

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 264-8925
제조사 부품 번호:: TN5335K1-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	350V
	Package Type	SOT-23
	Series	TN5335
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15Ω
	Channel Mode	MOSFET
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Width	1.3 mm
	Standards/Approvals	No
	Height	1.12mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 350V
	Package Type SOT-23
	Series TN5335
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15Ω
	Channel Mode MOSFET
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Width 1.3 mm
	Standards/Approvals No
	Height 1.12mm
	Automotive Standard No

Datasheet - TN5335K1-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23 TN5335K1-G

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