제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 262-6758
제조사 부품 번호:: IRFI530NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220

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RS 제품 번호:: 262-6758
제조사 부품 번호:: IRFI530NPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.036Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.036Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFI530NPBF

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

High voltage isolation 2.5KVRMS

Infineon HEXFET Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220

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