STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP65N045M9

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩14,908.40

Add to Basket
수량 선택 또는 입력
재고있음
  • 455 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩14,908.40
10 - 19₩14,551.20
20 - 29₩14,194.00
30 +₩13,761.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
248-9689
제조사 부품 번호:
STP65N045M9
제조업체:
STMicroelectronics
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

10.4 mm

Standards/Approvals

UL

Height

4.6mm

Length

28.9mm

Automotive Standard

AEC-Q101

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Worldwide best FOM RDS on Qg among silicon based devices

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

100 percent avalanche tested

관련된 링크들