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Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 16-Pin HDSOP IPTC063N15NM5ATMA1

RS 제품 번호:: 259-2736
제조사 부품 번호:: IPTC063N15NM5ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 16-Pin HDSOP IPTC063N15NM5ATMA1

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Subtotal (1 unit)*

₩8,027.60

재고있음

1,800 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩8,027.60
10 - 99	₩7,632.80
100 - 249	₩7,256.80
250 - 499	₩6,880.80
500 +	₩6,542.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-2736
제조사 부품 번호:: IPTC063N15NM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	122A
	Maximum Drain Source Voltage Vds	150V
	Package Type	HDSOP
	Series	IPT
	Pin Count	16
	Maximum Drain Source Resistance Rds	6.3mΩ
	Forward Voltage Vf	0.84V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	50nC
	Maximum Power Dissipation Pd	214W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	10.3 mm
	Length	10.1mm
	Height	2.35mm
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 122A
	Maximum Drain Source Voltage Vds 150V
	Package Type HDSOP
	Series IPT
	Pin Count 16
	Maximum Drain Source Resistance Rds 6.3mΩ
	Forward Voltage Vf 0.84V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 50nC
	Maximum Power Dissipation Pd 214W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 10.3 mm
	Length 10.1mm
	Height 2.35mm
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPTC063N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-26

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 16-Pin HDSOP IPTC063N15NM5ATMA1

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