Infineon IPP Type N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220
- RS 제품 번호:
- 258-3898
- 제조사 부품 번호:
- IPP65R095C7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩253,305.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩5,066.10 | ₩253,344.00 |
| 100 + | ₩4,914.00 | ₩245,739.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3898
- 제조사 부품 번호:
- IPP65R095C7XKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPP | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits offset switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Lowest conduction losses/package
Low switching losses
Better light load efficiency
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