Infineon IPD Type P-Channel MOSFET, 42 A, 650 V N TO-252 IPD60R210PFD7SAUMA1

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Subtotal (1 pack of 2 units)*

₩2,970.40

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한팩당
한팩당*
2 - 8₩1,485.20₩2,970.40
10 - 98₩1,410.00₩2,820.00
100 - 248₩1,325.40₩2,650.80
250 - 498₩1,240.80₩2,481.60
500 +₩1,137.40₩2,274.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
258-3852
제조사 부품 번호:
IPD60R210PFD7SAUMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The 600V CoolMOS PFD7 super junction MOSFET in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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