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Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

RS 제품 번호:: 258-0697
제조사 부품 번호:: BSC120N12LSGATMA1
제조업체:: Infineon

Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩6,053.60

마지막 RS 재고

최종적인 4,974 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
2 - 8	₩3,026.80	₩6,053.60
10 - 98	₩2,876.40	₩5,752.80
100 - 248	₩2,707.20	₩5,414.40
250 - 498	₩2,519.20	₩5,038.40
500 +	₩2,312.40	₩4,624.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-0697
제조사 부품 번호:: BSC120N12LSGATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	120V
	Package Type	TDSON
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.2mΩ
	Channel Mode	N
	Forward Voltage Vf	0.87V
	Maximum Power Dissipation Pd	114W
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	6.35 mm
	Length	5.49mm
	Standards/Approvals	IEC 61249-2-21, RoHS
	Height	1.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 120V
	Package Type TDSON
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.2mΩ
	Channel Mode N
	Forward Voltage Vf 0.87V
	Maximum Power Dissipation Pd 114W
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 6.35 mm
	Length 5.49mm
	Standards/Approvals IEC 61249-2-21, RoHS
	Height 1.1mm
	Automotive Standard No

Datasheet - BSC120N12LSGATMA1

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge

Lower output charge

Logic level compatibility

Higher power density designs

Higher switching frequency

Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

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