Infineon OptiMOS 3 Type N-Channel MOSFET, 49 A, 40 V Enhancement, 8-Pin TDSON BSC093N04LSGATMA1

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₩5,282.80

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5 - 1245₩1,056.56₩5,282.80
1250 - 2495₩1,037.76₩5,188.80
2500 +₩1,018.96₩5,094.80

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포장 옵션
RS 제품 번호:
752-8164
제조사 부품 번호:
BSC093N04LSGATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8.6nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.35mm

Width

5.35 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1


This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.

Features & Benefits


• Provides a maximum continuous drain current of 49A

• Operates effectively in a voltage range of 40V

• Low drain-source resistance improves performance

• Supports surface mount design for easier integration

• High thermal stability with a maximum temperature rating of +150°C

• Suitable for diverse applications due to a wide gate threshold voltage range

Applications


• Ideal for power in automation and robotics

• Utilised in electric vehicle charging systems

• Suitable for power supply and conversion tasks

• Applied in motor control circuits and drives

• Used in telecommunications for efficient signal management

What type of load can this device handle effectively?


It can manage loads up to 49A, making it appropriate for high-current applications across various industries.

Is it compatible with surface mount technology?


Yes, it features a surface mount design, facilitating straightforward installation on PCBs.

What are the gate voltage limitations for this component?


The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.

Can it operate in extreme temperature conditions?


Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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