Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223 IRFL014NTRPBF
- RS 제품 번호:
- 257-5817
- 제조사 부품 번호:
- IRFL014NTRPBF
- 제조업체:
- Infineon
N
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩9,287.20
재고있음
- 4,930 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩928.72 | ₩9,287.20 |
| 50 - 90 | ₩881.72 | ₩8,824.72 |
| 100 - 240 | ₩829.08 | ₩8,294.56 |
| 250 - 990 | ₩770.80 | ₩7,711.76 |
| 1000 + | ₩708.76 | ₩7,095.12 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-5817
- 제조사 부품 번호:
- IRFL014NTRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET Fifth Generation | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET Fifth Generation | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
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