Vishay SI5936DU N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3

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RS 제품 번호:
256-7376
제조사 부품 번호:
SI5936DU-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

SI5936DU

Package Type

PowerPAK ChipFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.04Ω

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

10.4W

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Height

850μm

Automotive Standard

No

Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3


This MOSFET is a surface-mount N-channel switching transistor designed for power-management duties in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring efficient low-voltage switching and heat-handling in tight footprints.

Features and Benefits:


• 30V rating enables robust low-voltage switching capability
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices

Applications


• Suitable for DC-DC converter output stage use
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints

What package format should I plan for in PCB layout?


The device arrives in a PowerPAK ChipFET surface-mount style, so pad layouts must match a low-profile SMT footprint and allow thermal vias or copper pours for heat spread.

How does temperature affect continuous operation limits?


The component is specified to function from -55 °C to +150 °C, but thermal management is required to maintain power dissipation within ratings at elevated case temperatures.

What gate-drive considerations are there for switching performance?


Expect moderate gate-charge demand

driver capability should supply the typical 3.5 nC charge quickly to reduce switching losses while controlling dv/dt.

Is this suitable for automotive applications?


It is not designated to automotive standards, so it should not be used where automotive qualification is mandatory.

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