Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

RS 제품 번호:: 256-7363
제조사 부품 번호:: SI4948BEY-T1-E3
제조업체:: Vishay

Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 5 units)*

₩10,432.50

1,100 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 45	₩2,086.50	₩10,432.50
50 - 95	₩1,989.00	₩9,945.00
100 - 245	₩1,868.10	₩9,340.50
250 - 995	₩1,731.60	₩8,658.00
1000 +	₩1,591.20	₩7,956.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7363
제조사 부품 번호:: SI4948BEY-T1-E3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOIC
	Series	Si4948BEY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.15Ω
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	1.4W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Height	1.75mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOIC
	Series Si4948BEY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.15Ω
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 1.4W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Height 1.75mm
	Automotive Standard No

Datasheet - SI4948BEY-T1-E3

Vishay Si4948BEY Series MOSFET, -60V Drain Source Voltage, -2.4A Continuous Drain Current - SI4948BEY-T1-E3

This MOSFET is a P‑channel surface‑mount transistor designed for switching and power‑control tasks in electronic systems. It operates within a wide temperature envelope and is intended for use on Compact boards where an SOIC package and moderate power handling are required. The device suits engineers needing a P‑channel option with specific gate charge and thermal limits for circuit‑level design.

Features and Benefits:

• P‑channel device supporting negative drain‑source voltage for high‑side switching • Rated drain‑source voltage of -60V enabling elevated voltage applications • Maximum continuous drain current -2.4A allowing moderate load handling • Low on‑resistance 0.15Ω reducing conduction losses • Typical gate charge 14.5nC facilitating predictable switching behaviour • Power dissipation 1.4W managing thermal budget in confined layouts

Applications

• Suitable for high‑side switches in motor control modules • Ideal for load disconnects in power management circuits • Used for reverse polarity protection in supply rails • Can be used for battery management and charging control • Suitable for SMD assemblies requiring Compact P‑channel transistors

What gate voltage limits should be observed during design?

The gate‑source voltage must not exceed ±20V to prevent gate oxide stress and ensure reliable operation.

How does the device behave at elevated temperatures?

It is specified to operate up to 175°C maximum, so designers should account for derating of current and power with temperature rise.

What package and pin count are available for PCB layout considerations?

The component is supplied in an SOIC‑8 package with eight pins, suitable for standard SMD footprint designs.

Which standards relate to material and process acceptability?

The component complies with RoHS 2002/95/EC and follows IEC 61249‑2‑21 material specifications.

What forward voltage or body diode characteristic is indicated?

A forward voltage of -1.2V is specified for the intrinsic diode conduction behaviour.