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Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3

RS 제품 번호:: 256-7358
제조사 부품 번호:: SI3483DDV-T1-GE3
제조업체:: Vishay

Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3

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Subtotal (1 reel of 3000 units)*

₩1,200,000.00

일시적 품절

2026년 12월 28일 부터 배송

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수량	한팩당	릴당*
3000 - 3000	₩400.00	₩1,201,800.00
6000 - 6000	₩392.00	₩1,177,800.00
9000 +	₩380.00	₩1,142,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7358
제조사 부품 번호:: SI3483DDV-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-6.4A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TSOP-6
	Series	SI3483DDV
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.0513Ω
	Maximum Gate Source Voltage Vgs	16V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.5nC
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	3W
	Maximum Operating Temperature	+150°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -6.4A
	Maximum Drain Source Voltage Vds -30V
	Package Type TSOP-6
	Series SI3483DDV
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.0513Ω
	Maximum Gate Source Voltage Vgs 16V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.5nC
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 3W
	Maximum Operating Temperature +150°C
	Height 1.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI3483DDV-T1-GE3

Vishay SI3483DDV Series MOSFET, 3W Maximum Power Dissipation, -30V Maximum Drain Source Voltage - SI3483DDV-T1-GE3

This p-channel MOSFET is a surface-mount switching transistor designed for electronic power control in compact assemblies. It operates across a broad temperature span and is suitable for low-voltage applications requiring moderate current handling and efficient conduction. The device comes in a TSOP-6 package and is specified for standard RoHS manufacturing environments.

Features and Benefits:

• Low Rds(on) 0.0513Ω enables reduced conduction losses
• Maximum continuous drain current -6.4A supports moderate load currents
• Drain-source voltage rating -30V permits low-voltage switching
• Gate threshold allowing Vgs up to 16V provides flexible drive range
• Typical gate charge 4.5nC yields faster switching for efficiency
• Power dissipation 3W limits thermal load for compact designs

Applications

• Used for reverse-battery protection in portable electronics
• Suitable for load switching in power-distribution rails
• Ideal for high-side switching in battery-management systems
• Can be used for USB power-path selection circuits
• Used with motor-driver gates in low-voltage systems

What thermal extremes can the device tolerate in operation?

It is rated to operate from -55°C up to +150°C, allowing use across harsh ambient and elevated-temperature board conditions.

How many pins and what mounting style does it use?

The package has six pins and is intended for surface mounting on populated boards.

What channel type and conduction polarity should be expected?

The transistor is a p-channel device, so source and drain roles align with P-type switching configurations.

Is this suited to automotive standard requirements?

It is not designated as an automotive-standard component and should not be assumed to meet specific automotive qualification criteria.