Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

RS 제품 번호:: 256-7311
제조사 부품 번호:: IRFR9010TRPBF
제조업체:: Vishay

Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

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Subtotal (1 pack of 10 units)*

₩19,060.00

일시적 품절

1,970 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 40	₩1,906.00	₩19,060.00
50 - 90	₩1,812.00	₩18,120.00
100 - 240	₩1,704.00	₩17,040.00
250 - 990	₩1,584.00	₩15,840.00
1000 +	₩1,452.00	₩14,520.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7311
제조사 부품 번호:: IRFR9010TRPBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-5.3A
	Maximum Drain Source Voltage Vds	-50V
	Series	IRFR9010
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.5Ω
	Typical Gate Charge Qg @ Vgs	9.1nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-5.5V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	25W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	2.39mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -5.3A
	Maximum Drain Source Voltage Vds -50V
	Series IRFR9010
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.5Ω
	Typical Gate Charge Qg @ Vgs 9.1nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -5.5V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 25W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 2.39mm
	Automotive Standard No

Vishay IRFR9010 Series Power MOSFET, 50V Maximum Drain Source Voltage, 5.3A Maximum Continuous Drain Current - IRFR9010TRPBF

This power MOSFET is a P‑channel semiconductor device designed for switching and power-management roles in surface-mount assemblies. It operates across a wide thermal range and is suited to circuits requiring controlled high-current switching and moderate voltage handling in compact TO‑252 packaging.

Features and Benefits:

• 50V drain-to-source rating enables moderate-voltage switching
• 0.5Ω Rds(on) reduces conduction losses in load paths
• 5.3A continuous drain current supports sustained current delivery
• 9.1nC typical gate charge allows faster gate-drive response
• 25W maximum power dissipation permits higher thermal loading
• -55°C to +150°C operating range supports harsh environments

Applications

• Suitable for high-side switching in power rails
• Ideal for battery management and load disconnects
• Used with compact converters requiring surface mount
• Can be used for reverse-polarity protection circuits
• Suitable for thermal-stress testing in electronics validation

What package type does it use and how does that affect mounting?

It comes in a TO‑252 package designed for surface mounting, providing a low-profile option compatible with reflow processes and enabling thermal coupling to PCB copper for heat dissipation.

What gate-drive limitations should be considered during design?

The device tolerates up to 20V between gate and source, so gate drivers must remain within that range to avoid damaging the gate oxide.

How should thermal management be approached on a PCB?

Given a 25W maximum dissipation, designers should allocate adequate copper area or thermal vias beneath the package to spread heat and maintain junction temperature within safe limits.

Are there special considerations for switching performance?

The typical gate charge of 9.1nC implies moderate gate-drive energy

driver selection should balance switching speed against EMI and drive power.