Vishay IRFR220 Type N-Channel Power MOSFET, 4.8 A, 200 V, 3-Pin TO-252 IRFR220PBF
- RS 제품 번호:
- 256-7309
- 제조사 부품 번호:
- IRFR220PBF
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩12,340.00
재고있음
- 1,620 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,234.00 | ₩12,340.00 |
| 20 - 40 | ₩1,206.00 | ₩12,060.00 |
| 50 - 90 | ₩1,186.00 | ₩11,860.00 |
| 100 + | ₩1,146.00 | ₩11,460.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 256-7309
- 제조사 부품 번호:
- IRFR220PBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFR220 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFR220 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.39mm | ||
Automotive Standard No | ||
Vishay IRFR220 Series Power MOSFET, 200V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFR220PBF
This power MOSFET is a high-voltage N-channel transistor intended for switching and amplification tasks in surface-mount designs. It operates across a wide temperature range for demanding environments and is supplied in a compact TO-252 package suitable for PCB-mounted power stages.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching
• 0.8Ω Rds(on) reduces conduction losses under load
• 4.8A continuous drain current supports moderate currents
• 14nC typical gate charge yields faster gate transitions
• 42W maximum power dissipation handles significant thermal stress
• ±20V gate tolerance simplifies drive-voltage selection
• 0.8Ω Rds(on) reduces conduction losses under load
• 4.8A continuous drain current supports moderate currents
• 14nC typical gate charge yields faster gate transitions
• 42W maximum power dissipation handles significant thermal stress
• ±20V gate tolerance simplifies drive-voltage selection
Applications
• Suitable for DC-DC converters requiring 200V devices
• Ideal for switch-mode power supplies in compact layouts
• Used with motor drivers needing moderate current handling
• Can be used for industrial control switching functions
• Suitable for high-voltage protection circuits on PCBs
• Ideal for switch-mode power supplies in compact layouts
• Used with motor drivers needing moderate current handling
• Can be used for industrial control switching functions
• Suitable for high-voltage protection circuits on PCBs
What mounting method is required for this component?
It is intended for surface-mount assembly in the TO-252 footprint and should be soldered directly to the PCB pad for thermal and electrical performance.
How does temperature affect continuous operation limits?
The device is specified to function from -55°C to +150°C
thermal derating must be applied above ambient limits to maintain rated continuous current and dissipation.
What gate-drive considerations are recommended?
The maximum gate-source voltage is 20V, so gate drivers should limit amplitude within this range and account for the 14nC typical gate charge when sizing driver current.
What package height should be allowed in enclosure designs?
Mechanical clearance should accommodate a component height of 2.39mm measured from the PCB to the highest point.
관련된 링크들
- Vishay IRFR Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin TO-252 IRFR110PBF
- Vishay IRFR Type N-Channel MOSFET, 4.8 A, 200 V Enhancement, 3-Pin TO-252 IRFR220TRPBF
- Vishay Type N-Channel MOSFET, 14 A, 60 V, 3-Pin TO-252 IRFR024PBF
- Vishay Type N-Channel MOSFET, 4.8 A, 200 V, 3-Pin TO-252
- Vishay Type N-Channel MOSFET, 7.7 A, 100 V, 3-Pin TO-252 IRFR120PBF
- Vishay IRFR Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin TO-252
- Vishay Type P-Channel MOSFET, 5.1 A, 60 V, 3-Pin TO-252 IRFR9014PBF
- Vishay Type P-Channel MOSFET, 8.8 A, 60 V, 3-Pin TO-252 IRFR9024PBF
