Vishay Type N-Channel MOSFET, 243 A, 30 V Enhancement, 4-Pin PowerPAK SO-8L SQJ154EP-T1_GE3
- RS 제품 번호:
- 252-0305
- 제조사 부품 번호:
- SQJ154EP-T1_GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩15,970.50
재고있음
- 50 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩1,597.05 | ₩15,970.50 |
| 50 - 90 | ₩1,517.10 | ₩15,171.00 |
| 100 - 240 | ₩1,427.40 | ₩14,274.00 |
| 250 - 990 | ₩1,326.00 | ₩13,260.00 |
| 1000 + | ₩1,220.70 | ₩12,207.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0305
- 제조사 부품 번호:
- SQJ154EP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 243A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0025mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 243A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0025mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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