제조사부품번호

Nexperia N-Channel MOSFET, 410 mA, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX

RS 제품 번호:: 251-7923
제조사 부품 번호:: PSMNR90-50SLHAX
제조업체:: Nexperia

Nexperia N-Channel MOSFET, 410 mA, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (2 units, in packs of 2)*

₩18,680.00

마지막 RS 재고

최종적인 1,982 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
2 - 48	₩9,340.00	₩18,680.00
50 - 98	₩8,880.00	₩17,760.00
100 - 248	₩8,330.00	₩16,660.00
250 - 998	₩7,770.00	₩15,540.00
1000 +	₩7,540.00	₩15,080.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 251-7923
제조사 부품 번호:: PSMNR90-50SLHAX
제조업체:: Nexperia

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모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	410mA
	Maximum Drain Source Voltage Vds	50V
	Package Type	LFPAK88
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	112nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	8.1mm
	Length	8.1mm
	Standards/Approvals	No
	Width	1.7mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Nexperia
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 410mA
	Maximum Drain Source Voltage Vds 50V
	Package Type LFPAK88
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 112nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 8.1mm
	Length 8.1mm
	Standards/Approvals No
	Width 1.7mm
	Automotive Standard AEC-Q101

Datasheet - PSMNR90-50SLHAX

The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating

Qualified to 175 °C

Avalanche rated, 100 % tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Nexperia N-Channel MOSFET, 410 mA, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX

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