Nexperia N-Channel MOSFET, 410 mA, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX

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RS 제품 번호:
251-7922
제조사 부품 번호:
PSMNR90-50SLHAX
제조업체:
Nexperia
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브랜드

Nexperia

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

410mA

Maximum Drain Source Voltage Vds

50V

Package Type

LFPAK88

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

112nC

Maximum Operating Temperature

175°C

Width

1.7mm

Standards/Approvals

No

Length

8.1mm

Height

8.1mm

Automotive Standard

AEC-Q101

The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating

Qualified to 175 °C

Avalanche rated, 100 % tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

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