Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1

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₩7,670.40

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250 - 499₩5,583.60
500 +₩5,019.60

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포장 옵션
RS 제품 번호:
249-6906
제조사 부품 번호:
IPB80N08S2L07ATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™


The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

Summary of Features


•N-channel Logic Level - Enhancement mode

•Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (lead free)

•Ultra low Rds(on)

•100% Avalanche tested

Benefits


•world's lowest RDS at 75V (on) in planar technology

•highest current capability

•lowest switching and conduction power losses for highest thermal efficiency

•robust packages with superior quality and reliability

•Optimized total gate charge enables smaller driver output stages

Potential Applications


•Valves control

•Solenoids control

•Lighting

•Single-ended motors

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