Infineon OptiMOS 5 80V Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-263 IPB049N08N5ATMA1
- RS 제품 번호:
- 215-2496
- 제조사 부품 번호:
- IPB049N08N5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩23,932.40
재고있음
- 2,730 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 240 | ₩2,393.24 | ₩23,932.40 |
| 250 - 490 | ₩2,333.08 | ₩23,330.80 |
| 500 + | ₩2,297.36 | ₩22,973.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2496
- 제조사 부품 번호:
- IPB049N08N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 80V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 80V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineons OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on) reduction of up to 44%
관련된 링크들
- Infineon OptiMOS 5 80V Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2H5ATMA2
- Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1
- Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2
- Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1
