Infineon IAUC N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1

RS 제품 번호:: 249-6896
제조사 부품 번호:: IAUC80N04S6L032ATMA1
제조업체:: Infineon

Infineon IAUC N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1

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Subtotal (1 pack of 5 units)*

₩12,420.00

4,590 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩2,484.00	₩12,420.00
10 - 95	₩2,236.00	₩11,180.00
100 - 245	₩2,012.00	₩10,060.00
250 - 495	₩1,812.00	₩9,060.00
500 +	₩1,628.00	₩8,140.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 249-6896
제조사 부품 번호:: IAUC80N04S6L032ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO8 5 x 6
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO8 5 x 6
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC80N04S6L032ATMA1

Infineon IAUC Series MOSFET, 40V Maximum Drain‑Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6L032ATMA1

This MOSFET is an N‑channel enhancement device designed for high‑current switching and power management in demanding environments. It operates across an extended temperature range and is intended for surface‑mount applications where Compact power handling is required. The device conforms to automotive test standards and environmental restrictions, making it suitable for systems that require robust thermal tolerance and regulated material composition.

Features and Benefits:

• 3.20mΩ Rds delivers low conduction losses for efficient power transfer
• 80A continuous drain current supports substantial load currents
• 81W power dissipation allows sustained high‑power operation
• 80nC typical gate charge enables controlled switching performance
• 20V gate‑source tolerance protects against high gate excursions

Applications

• Suitable for DC‑DC converter outputs in automotive power systems
• Ideal for high‑current motor driver stages in vehicles
• Used with power distribution modules requiring surface mounting
• Can be used for battery management and charging circuits
• Appropriate for thermally stressed environments up to high temperatures

What package type does it use for assembly on boards?

It is supplied in a SuperSO8 5 x 6 package intended for surface‑mount placement.

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C up to 175°C for wide thermal‑range applications.

How does it meet automotive qualification requirements?

It fulfils the AEC‑Q101 automotive standard for component stress screening.

Is the device compliant with environmental material restrictions?

It conforms to RoHS requirements restricting certain hazardous substances.

What is the maximum allowed gate‑source voltage during use?

The device permits up to 20V between gate and source.