Microchip MSC25SMA330B4 Type N-Channel MOSFET, 104 A, 3300 V Enhancement TO-247 MSC025SMA330B4
- RS 제품 번호:
- 249-4128
- 제조사 부품 번호:
- MSC025SMA330B4
- 제조업체:
- Microchip
Subtotal (1 unit)*
₩1,257,148.48
일시적 품절
- 2026년 6월 25일 부터 배송
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|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-4128
- 제조사 부품 번호:
- MSC025SMA330B4
- 제조업체:
- Microchip
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | MSC25SMA330B4 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series MSC25SMA330B4 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip's MOSFET-SiC-3300V is part of the newest family of SiC MOSFET devices. The Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. This device is fast and reliable body diode with superior avalanche ruggedness.
Low capacitances and low gate charge
Fast switching speed due to low internal gage resistance (ESR)
Stable operation at high junction temperature at 175 degrees Celsius
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