STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- RS 제품 번호:
- 248-4900
- 제조사 부품 번호:
- STL325N4LF8AG
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩11,178,480.00
일시적 품절
- 2026년 12월 28일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩3,726.16 | ₩11,176,788.00 |
| 6000 - 6000 | ₩3,650.96 | ₩10,953,444.00 |
| 9000 + | ₩3,541.92 | ₩10,624,632.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-4900
- 제조사 부품 번호:
- STL325N4LF8AG
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Standards/Approvals | UL | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Standards/Approvals UL | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package
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