DiodesZetex Type N-Channel MOSFET, 170 A, 30 V Enhancement, 8-Pin PowerDI5060-8 DMTH32M5LPSQ-13
- RS 제품 번호:
- 246-7563
- 제조사 부품 번호:
- DMTH32M5LPSQ-13
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩8,666.80
재고있음
- 추가로 2025년 12월 29일 부터 2,490 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩1,733.36 | ₩8,666.80 |
| 50 - 95 | ₩1,695.76 | ₩8,478.80 |
| 100 - 245 | ₩1,646.88 | ₩8,234.40 |
| 250 - 995 | ₩1,613.04 | ₩8,065.20 |
| 1000 + | ₩1,571.68 | ₩7,858.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7563
- 제조사 부품 번호:
- DMTH32M5LPSQ-13
- 제조업체:
- DiodesZetex
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application. Less than 1.1 mm of packaging size makes it ideal for thin applications.
Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±16 V It offers low on-resistance and has high BVDSS rating for power application It offers low input capacitance
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