DiodesZetex Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin PowerDI3333-8 DMT32M4LFG-7
- RS 제품 번호:
- 246-7548
- 제조사 부품 번호:
- DMT32M4LFG-7
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩7,689.20
마지막 RS 재고
- 최종적인 1,985 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩1,537.84 | ₩7,691.08 |
| 50 - 95 | ₩1,500.24 | ₩7,504.96 |
| 100 - 245 | ₩1,464.52 | ₩7,326.36 |
| 250 - 995 | ₩1,430.68 | ₩7,151.52 |
| 1000 + | ₩1,396.84 | ₩6,980.44 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7548
- 제조사 부품 번호:
- DMT32M4LFG-7
- 제조업체:
- DiodesZetex
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.028mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.028mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has an excellent Qgd xRDS(ON) product (FOM) and advanced technology for DC-DC conversion.
Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±20 V It provides small form factor thermally and efficient package enables higher density end products It occupies just 33% of the board area occupied by SO-8 enabling smaller end product
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