DiodesZetex Type P-Channel MOSFET, 79 A, 40 V Enhancement, 3-Pin TO-252 DMPH4011SK3-13
- RS 제품 번호:
- 246-7536
- 제조사 부품 번호:
- DMPH4011SK3-13
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩9,390.60
재고있음
- 추가로 2025년 12월 29일 부터 2,355 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩1,878.12 | ₩9,394.36 |
| 50 - 95 | ₩1,833.00 | ₩9,166.88 |
| 100 - 245 | ₩1,789.76 | ₩8,946.92 |
| 250 - 995 | ₩1,746.52 | ₩8,732.60 |
| 1000 + | ₩1,705.16 | ₩8,522.04 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7536
- 제조사 부품 번호:
- DMPH4011SK3-13
- 제조업체:
- DiodesZetex
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.1 mm | |
| Length | 6.58mm | |
| Standards/Approvals | No | |
| Height | 2.29mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Width 6.1 mm | ||
Length 6.58mm | ||
Standards/Approvals No | ||
Height 2.29mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V It offers low on-resistance Fast switching speed
관련된 링크들
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