DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN
- RS 제품 번호:
- 246-6796
- 제조사 부품 번호:
- DMN2451UFB4-7B
- 제조업체:
- DiodesZetex
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 10000 units)*
₩714,400.00
일시적 품절
- 2026년 3월 09일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 10000 - 10000 | ₩71.44 | ₩716,280.00 |
| 20000 - 40000 | ₩69.56 | ₩697,480.00 |
| 50000 + | ₩67.68 | ₩684,320.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-6796
- 제조사 부품 번호:
- DMN2451UFB4-7B
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 900mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.4mm | |
| Width | 0.65 mm | |
| Length | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 900mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.4mm | ||
Width 0.65 mm | ||
Length 1.05mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1006-3 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
관련된 링크들
- DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2451UFB4-7B
- DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET, 1.4 A, 12 V Enhancement, 3-Pin X1-DFN
- DiodesZetex DMN Type N-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2450UFB4-7R
- DiodesZetex DMN Type N-Channel MOSFET, 1.4 A, 12 V Enhancement, 3-Pin X1-DFN DMN1150UFB-7B
- DiodesZetex DMN Type N-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin X2-DFN DMN2300UFB4-7B
- DiodesZetex DMN2991UFO Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 3-Pin X2-DFN