Infineon IRF Type N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247 IRF300P227
- RS 제품 번호:
- 244-2930
- 제조사 부품 번호:
- IRF300P227
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩11,449.20
재고있음
- 추가로 2025년 12월 29일 부터 383 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩11,449.20 |
| 10 - 39 | ₩11,110.80 |
| 40 - 79 | ₩10,791.20 |
| 80 - 119 | ₩10,452.80 |
| 120 + | ₩10,358.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-2930
- 제조사 부품 번호:
- IRF300P227
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRF300P227 qualification report describes the characteristics of the product with respect to quality and reliability. The qualification sample selection was done on production lots which were manufactured and tested on standard production processes and meet the defined requirements. The qualification test results of those products as outlined in this document are based on JEDEC for target applications and may reference existing qualification results of similar products. Such referencing is justified by the structural similarity of the products.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
관련된 링크들
- Infineon IRF Type N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET, 100 A, 300 V Enhancement, 3-Pin TO-247 IRF300P226
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